P-channel MOSFET, 20V Drain-Source Voltage (Vdss), -6A Continuous Drain Current (ID), and 28mΩ Drain-Source On-Resistance (Rds On). Features a 3-pin SOT-23 package for surface mounting, with a maximum power dissipation of 2.5W and an operating temperature range of -55°C to 150°C. Includes 835pF input capacitance and fast switching times with a 9ns fall time, 22ns turn-on delay, and 28ns turn-off delay. Packaged in tape and reel, this RoHS compliant component offers a nominal gate-source threshold voltage of -600mV.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2399DS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
-6A
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
9ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
835pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-600mV
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
34mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-600mV
Turn-Off Delay Time
28ns
Turn-On Delay Time
22ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI2399DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2399DS-T1-GE3 to view detailed technical specifications.
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