P-channel MOSFET, surface mount, in a TSOP package. Features a -20V Drain-to-Source Voltage (Vdss) and a continuous drain current of 7.5A. Offers a low Drain-Source On-Resistance (Rds On) of 24mR. Operates with a nominal Gate-to-Source Voltage (Vgs) of -1.5V and has an input capacitance of 1.67nF. Maximum power dissipation is 4.2W, with an operating temperature range of -55°C to 150°C.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3407DV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 24mR |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.67nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.2W |
| Mount | Surface Mount |
| Nominal Vgs | -1.5V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.5V |
| Weight | 0.000705oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3407DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3407DV-T1-GE3 to view detailed technical specifications.
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