N-channel, small-signal MOSFET featuring a 30V drain-source voltage and 8A continuous drain current. Offers a low 28mΩ drain-source on-resistance and a maximum power dissipation of 2.98W. Designed for surface mounting in a TSOP package, this component boasts fast switching speeds with turn-on delay of 18ns and fall time of 12ns. It operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI3424BDV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
8A
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
28MR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
735pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.98W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
28mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
17ns
Turn-On Delay Time
18ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3424BDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3424BDV-T1-GE3 to view detailed technical specifications.
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