N-Channel MOSFET featuring 30V drain-source voltage and 26mΩ drain-source resistance. This surface mount component offers a continuous drain current of 8A and a maximum power dissipation of 3.6W. Operating across a temperature range of -55°C to 150°C, it boasts fast switching characteristics with a 3ns turn-on delay and 8ns fall time. Packaged in TSOP for tape and reel distribution, this RoHS compliant device is ideal for power management applications.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay SI3424CDV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 405pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.000705oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3424CDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3424CDV-T1-GE3 to view detailed technical specifications.
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