The SI3424DV-T1-GE3 is a surface-mount N-CHANNEL MOSFET from Vishay with a maximum operating temperature range of -55°C to 150°C. It features a maximum power dissipation of 1.14W and a continuous drain current of 5A. The device has a drain to source breakdown voltage of 30V and a drain to source resistance of 28mR. The MOSFET is compliant with RoHS regulations and is available in a tape and reel packaging with 3000 units per package.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.14W
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Technical Specifications
Vishay SI3424DV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.14W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.14W |
| Rds On Max | 28mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3424DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3424DV-T1-GE3 to view detailed technical specifications.
No datasheet is available for this part.