P-channel, surface-mount MOSFET for general-purpose small signal applications. Features a 20V drain-to-source voltage and 6A continuous drain current. Offers a low 38mΩ drain-to-source resistance (Rds On Max) and fast switching speeds with a 20ns turn-on delay and 22ns fall time. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 3.3W. Packaged in a compact TSOP-6 case, this RoHS compliant component is supplied on tape and reel.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI3433CDV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
6A
Drain to Source Resistance
38mR
Drain to Source Voltage (Vdss)
20V
Fall Time
22ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
1.3nF
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.3W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
38mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
50ns
Turn-On Delay Time
20ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3433CDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3433CDV-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
