P-channel, surface-mount MOSFET for general-purpose small signal applications. Features a 20V drain-to-source voltage and 6A continuous drain current. Offers a low 38mΩ drain-to-source resistance (Rds On Max) and fast switching speeds with a 20ns turn-on delay and 22ns fall time. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 3.3W. Packaged in a compact TSOP-6 case, this RoHS compliant component is supplied on tape and reel.
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Vishay SI3433CDV-T1-E3 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 1.3nF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 38mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
| RoHS | Compliant |
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