N-channel MOSFET, surface mount, in a TSOP package. Features 30V drain-to-source breakdown voltage and 4.6A continuous drain current. Offers low 34mΩ Rds(on) at a nominal 4V Vgs. Operates across a -55°C to 150°C temperature range with 2W power dissipation. Includes fast switching times with turn-on delay of 21ns and fall time of 30ns. RoHS compliant.
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| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.14W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 34mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 21ns |
| RoHS | Compliant |
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