VISHAY

SI3434DV-T1-GE3

Datasheet

N-CH MOSFET 30V 4.6A 34mR TSOP Surface Mount

Vishay

SI3434DV-T1-GE3

Name: SI3434DV-T1-GE3 Vishay
Brand: Vishay
SKU: SI3434DV-T1-GE3

N-CH MOSFET 30V 4.6A 34mR TSOP Surface Mount

N-channel MOSFET, surface mount, in a TSOP package. Features 30V drain-to-source breakdown voltage and 4.6A continuous drain current. Offers low 34mΩ Rds(on) at a nominal 4V Vgs. Operates across a -55°C to 150°C temperature range with 2W power dissipation. Includes fast switching times with turn-on delay of 21ns and fall time of 30ns. RoHS compliant.

PackageTSOP

MountingSurface Mount

PolarityN-CHANNEL

Power2W

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Technical Specifications

Vishay SI3434DV-T1-GE3 technical specifications.

General

Package/Case	TSOP
Continuous Drain Current (ID)	4.6A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	34mR
Drain to Source Voltage (Vdss)	30V
Fall Time	30ns
Gate to Source Voltage (Vgs)	12V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.14W
Mount	Surface Mount
Nominal Vgs	4V
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2W
Radiation Hardening	No
Rds On Max	34mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	TrenchFET®
Threshold Voltage	4V
Turn-Off Delay Time	40ns
Turn-On Delay Time	21ns