P-Channel MOSFET, 150V Drain-Source Voltage, 1.1A Continuous Drain Current, 750mΩ Max Drain-Source On-Resistance. Features a 6-TSOP surface mount package, 14ns fall time, and 23ns turn-off delay. Operates with a nominal gate-source voltage of -4V and a maximum gate-source voltage of 20V. RoHS compliant and lead-free.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3437DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 750mR |
| Dual Supply Voltage | -150V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 2A |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3437DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3437DV-T1-E3 to view detailed technical specifications.
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