P-Channel MOSFET, 150V Drain-Source Voltage, 1.1A Continuous Drain Current, 750mΩ Max Drain-Source On-Resistance. Features a 6-TSOP surface mount package, 14ns fall time, and 23ns turn-off delay. Operates with a nominal gate-source voltage of -4V and a maximum gate-source voltage of 20V. RoHS compliant and lead-free.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3437DV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
1.1A
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
750mR
Dual Supply Voltage
-150V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
510pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
2A
Max Power Dissipation
3.2W
Mount
Surface Mount
Nominal Vgs
-4V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
750mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
-4V
Turn-Off Delay Time
23ns
Turn-On Delay Time
14ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3437DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3437DV-T1-E3 to view detailed technical specifications.
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