P-channel JFET for general-purpose small signal applications. Features a continuous drain current of 1.1A and a drain-to-source voltage of -150V. Offers a low Rds(on) of 750mR and a threshold voltage of -4V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.2W. Packaged in a compact TSOP surface-mount case, this component is halogen-free and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI3437DV-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI3437DV-T1-GE3 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | -150V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI3437DV-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
