P-channel JFET for general-purpose small signal applications. Features a continuous drain current of 1.1A and a drain-to-source voltage of -150V. Offers a low Rds(on) of 750mR and a threshold voltage of -4V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.2W. Packaged in a compact TSOP surface-mount case, this component is halogen-free and RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3437DV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
1.1A
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
-150V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
510pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
750mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-4V
Turn-Off Delay Time
23ns
Turn-On Delay Time
14ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3437DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3437DV-T1-GE3 to view detailed technical specifications.
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