N-Channel MOSFET, 150V Drain-Source Voltage (Vdss), 1.2A Continuous Drain Current (ID). Features 375mR maximum Drain-Source On Resistance (Rds On Max) and 1.14W maximum Power Dissipation. Operates with a 4V nominal Gate-Source Voltage (Vgs) and a 20V maximum Gate-Source Voltage. This surface mount component is housed in a TSOP package, with a 15ns fall time and 8ns turn-on delay time. RoHS compliant and lead-free.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.14W
Quick Jump:
Technical Specifications
Vishay SI3440DV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
1.2A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
375mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
375mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.14W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.14W
Radiation Hardening
No
Rds On Max
375mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
4V
Turn-Off Delay Time
20ns
Turn-On Delay Time
8ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3440DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3440DV-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
