N-channel MOSFET with 20V drain-source voltage and 3A continuous drain current. Features 57mΩ drain-to-source resistance at a nominal gate-source voltage of 1.8V. Operates with a threshold voltage of 1.8V and a gate-source voltage rating of 12V. This surface-mount component, packaged in TSOP, offers a maximum power dissipation of 1.67W and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 35ns and fall time of 15ns.
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Vishay SI3442BDV-T1-GE3 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 57mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 295pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.67W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 860mW |
| Radiation Hardening | No |
| Rds On Max | 57mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 35ns |
| Weight | 0.000705oz |
| RoHS | Compliant |
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