The SI3442DV-T1 is a single N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current rating of 4A and a drain to source breakdown voltage of 20V. The device has a drain to source resistance of 70mR and a maximum power dissipation of 2W. It is packaged in a TSOP package with dimensions of 3.05mm in length, 1.65mm in width, and 1mm in height, with a weight of 0.000705oz. The device is not RoHS compliant.
Vishay SI3442DV-T1 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Polarity | N-CHANNEL |
| RoHS Compliant | No |
| Series | SI3 |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
