The SI3443DV-T1-E3 is a P-CHANNEL MOSFET with a continuous drain current of 4A and a drain to source breakdown voltage of 20V. It has a drain to source resistance of 65mR and a maximum operating temperature of 150°C. The device is RoHS compliant and packaged in tape and reel quantities of 3000.
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| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| Series | SI3 |
| Turn-Off Delay Time | 57ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.00127oz |
| Width | 1.65mm |
| RoHS | Compliant |
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