The SI3445ADV-T1-E3 is a P-channel MOSFET with a continuous drain current of 4.4A and a drain to source voltage of 8V. It has a maximum drain-source on resistance of 42mR and an input capacitance of 260pF. The device is packaged in a TSOP package and is designed for surface mount applications. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
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Vishay SI3445ADV-T1-E3 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 42mR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 260pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 42mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 20ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI3445ADV-T1-E3 to view detailed technical specifications.
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