N-channel MOSFET, 30V drain-source voltage, 4.5A continuous drain current, and 35mΩ maximum drain-source on-resistance at 10V gate-source voltage. Features 2.0W power dissipation, 10ns turn-on delay, and 25ns turn-off delay. This surface-mount component is housed in a TSOP package, measuring 3.05mm x 1.65mm x 1mm, and operates within a temperature range of -55°C to 150°C.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI3456BDV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3456BDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3456BDV-T1-GE3 to view detailed technical specifications.
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