N-channel MOSFET, 30V drain-source voltage, 4.5A continuous drain current, and 35mΩ maximum drain-source on-resistance at 10V gate-source voltage. Features 2.0W power dissipation, 10ns turn-on delay, and 25ns turn-off delay. This surface-mount component is housed in a TSOP package, measuring 3.05mm x 1.65mm x 1mm, and operates within a temperature range of -55°C to 150°C.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI3456BDV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
4.5A
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
35MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
35mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3456BDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3456BDV-T1-GE3 to view detailed technical specifications.
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