N-channel Power MOSFET, 30V drain-source voltage, 6.3A continuous drain current. Features TrenchFET process technology for low on-resistance (40mΩ at 10V). Single Quad Drain configuration in a 6-pin TSOP (Thin Small Outline Package) with gull-wing leads for surface mounting. Maximum power dissipation of 1700mW, operating temperature range of -55°C to 150°C.
PackageTSOP
MountingSurface Mount
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Technical Specifications
Vishay Si3456DDV-T1-GE3 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | TSOP |
| Package Description | Thin Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 1.65 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MO-193AA |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 6.3A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 40@10VmOhm |
| Typical Gate Charge @ Vgs | 6@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 6nC |
| Typical Input Capacitance @ Vds | 325@15VpF |
| Maximum Power Dissipation | 1700mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 60pF |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay Si3456DDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay Si3456DDV-T1-GE3 to view detailed technical specifications.
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