N-channel, small-signal MOSFET transistor in a TSOP package. Features 30V drain-source voltage, 6.3A continuous drain current, and 40mΩ maximum drain-source on-resistance. Operates with a 1.2V threshold voltage and includes 12ns turn-on and 16ns turn-off delay times. Surface mountable with a maximum power dissipation of 1.7W and an operating temperature range of -55°C to 150°C. RoHS compliant and halogen-free.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI3456DDV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
6.3A
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
40mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
325pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.2V
Turn-Off Delay Time
16ns
Turn-On Delay Time
12ns
Weight
0.000705oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI3456DDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3456DDV-T1-GE3 to view detailed technical specifications.
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