N-channel, small-signal MOSFET transistor in a TSOP package. Features 30V drain-source voltage, 6.3A continuous drain current, and 40mΩ maximum drain-source on-resistance. Operates with a 1.2V threshold voltage and includes 12ns turn-on and 16ns turn-off delay times. Surface mountable with a maximum power dissipation of 1.7W and an operating temperature range of -55°C to 150°C. RoHS compliant and halogen-free.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI3456DDV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 6.3A |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 40mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 325pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.000705oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3456DDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3456DDV-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.