P-channel MOSFET with 30V drain-source breakdown voltage and 3.7A continuous drain current. Features low 54mΩ drain-source on-resistance at a nominal gate-source voltage of -3V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.14W. Packaged in a compact 6-TSOP surface-mount configuration, ideal for efficient integration.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.14W
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Technical Specifications
Vishay SI3457BDV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 54mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 54mR |
| Dual Supply Voltage | -30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.039inch |
| Lead Free | Lead Free |
| Length | 0.122inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.14W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.14W |
| Radiation Hardening | No |
| Rds On Max | 54mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 7ns |
| Width | 0.067inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3457BDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3457BDV-T1-E3 to view detailed technical specifications.
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