The SI3457DV-T1 is a P-channel MOSFET with a continuous drain current of 4.3A and a drain to source voltage of -30V. It has a drain to source resistance of 65mR and a gate to source voltage of 20V. The device is packaged in a TSOP package and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is not RoHS compliant.
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Vishay SI3457DV-T1 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| RoHS Compliant | No |
| Series | SI3 |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
| RoHS | Not Compliant |
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