SI3458BDV-T1-E3

N-channel Si JFET, general purpose small signal transistor in TSOP-6 package. Features 60V drain-source voltage (Vdss), 4.1A continuous drain current (ID), and 100mΩ drain-source on-resistance (Rds On). Operates with a nominal gate-source voltage (Vgs) of 3V, a threshold voltage of 3V, and a maximum gate-source voltage of 20V. Offers fast switching speeds with a turn-on delay time of 5ns and a fall time of 10ns. Maximum power dissipation is 2W, with operating temperatures from -55°C to 150°C. Surface mountable and RoHS compliant.