N-channel, small-signal MOSFET for general-purpose applications. Features a 60V drain-source voltage and 3.2A continuous drain current. Offers a low 100mΩ drain-source on-resistance and 3.3W power dissipation. Packaged in a compact TSOP surface-mount case with dimensions of 3.05mm (L) x 1.65mm (W) x 1mm (H). Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power3.3W
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Technical Specifications
Vishay SI3458BDV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
3.2A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
100mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.3W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
18ns
Turn-On Delay Time
5ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3458BDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3458BDV-T1-GE3 to view detailed technical specifications.
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