P-channel, general-purpose small signal MOSFET in a TSOP package. Features a continuous drain current of 2.2A and a drain-to-source voltage of -60V. Offers a low on-resistance of 216mΩ, with fast switching speeds including a 5ns turn-on delay and 18ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 3.3W. This surface-mount component is RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Vishay SI3459BDV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.2A
Drain to Source Resistance
216mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
216MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.3W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
216mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
18ns
Turn-On Delay Time
5ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3459BDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3459BDV-T1-GE3 to view detailed technical specifications.
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