N-channel enhancement mode power MOSFET, single quad drain configuration, designed for surface mounting. Features a 20V maximum drain-source voltage and 6.7A maximum continuous drain current. Housed in a 6-pin TSOP (Thin Small Outline Package) with gull-wing leads, measuring 3.05mm x 1.65mm x 1mm. Offers a low gate threshold voltage of 1V and a maximum drain-source on-resistance of 27mOhm at 4.5V. Operates within a temperature range of -55°C to 150°C.
PackageTSOP
MountingSurface Mount
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Technical Specifications
Vishay SI3460BDV-T1-GE3 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | TSOP |
| Package Description | Thin Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 1.65 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 6.7A |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 16@8V|[email protected]nC |
| Typical Input Capacitance @ Vds | 860@10VpF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 100pF |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SI3460BDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3460BDV-T1-GE3 to view detailed technical specifications.
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