The SI3471DV-T1-GE3 is a P-channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 5.1A and a drain to source resistance of 31mR. The device is packaged in a TSOP package and is RoHS compliant. It can dissipate a maximum power of 1.1W.
PackageTSOP
Resistance0.031R
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3471DV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | -12V |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Resistance | 0.031R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3471DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3471DV-T1-GE3 to view detailed technical specifications.
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