The SI3473DV-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 5.9A and a drain to source voltage of 12V. The device is packaged in a TSOP package and is mounted using surface mount techniques. It is RoHS compliant and has a maximum power dissipation of 1.1W.
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| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.9A |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.000705oz |
| RoHS | Compliant |
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