N-Channel Silicon TrenchFET® power MOSFET, 100V Drain-Source Voltage (Vdss), 3.8A Continuous Drain Current (ID), and 126mΩ Drain-to-Source On-Resistance (Rds On). This single-element, surface-mount device features a TSOP package, 2W power dissipation, and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8ns turn-on delay and a 20ns fall time. The component is RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay SI3474DV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Resistance | 126mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 196pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 126mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3474DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3474DV-T1-GE3 to view detailed technical specifications.
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