P-channel MOSFET for surface mount applications, featuring a 12V drain-source voltage and 8A continuous drain current. Offers a low 17.5mΩ drain-source on-resistance at 4.5V gate-source voltage. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 4.2W. Includes fast switching characteristics with a 10ns turn-on delay and 65ns turn-off delay.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
Quick Jump:
Technical Specifications
Vishay SI3477DV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 17.5mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 17.5mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 2.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.2W |
| Mount | Surface Mount |
| Nominal Vgs | -400mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 17.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000705oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3477DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3477DV-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
