P-channel MOSFET transistor for surface mount applications. Features a -30V drain-to-source voltage and 6.1A continuous drain current. Offers a low 34mR drain-to-source resistance and 4.2W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a 6-pin TSOP with tape and reel for high-volume assembly.
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Vishay SI3483CDV-T1-GE3 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 6.1A |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.2W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 34mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
| RoHS | Compliant |
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