P-channel, small-signal MOSFET for general-purpose applications. Features 30V drain-source breakdown voltage and 4.7A continuous drain current. Offers low 35mΩ drain-source on-resistance and 1.14W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in TSOP for surface mounting, with tape and reel availability. RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.14W
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Technical Specifications
Vishay SI3483DV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
4.7A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
35mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.14W
Mount
Surface Mount
Nominal Vgs
-1V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.14W
Radiation Hardening
No
Rds On Max
35mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
71ns
Turn-On Delay Time
10ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI3483DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3483DV-T1-E3 to view detailed technical specifications.
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