P-channel, small-signal MOSFET for general-purpose applications. Features 30V drain-source breakdown voltage and 4.7A continuous drain current. Offers low 35mΩ drain-source on-resistance and 1.14W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in TSOP for surface mounting, with tape and reel availability. RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.14W
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Technical Specifications
Vishay SI3483DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 35mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.14W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.14W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 71ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3483DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3483DV-T1-E3 to view detailed technical specifications.
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