P-channel MOSFET, designed for general-purpose small signal applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 7A. Offers a low on-resistance (Rds On Max) of 27.5mR. Packaged in a compact TSOP surface-mount case with dimensions of 3.05mm length, 1.65mm width, and 1mm height. Operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.97W. Includes fast switching characteristics with turn-on delay time of 22ns and fall time of 84ns.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3493BDV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Resistance | 27.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 27.5mR |
| Fall Time | 84ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 1.805nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.97W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 27.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 22ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3493BDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3493BDV-T1-GE3 to view detailed technical specifications.
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