P-channel MOSFET, designed for general-purpose small signal applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 7A. Offers a low on-resistance (Rds On Max) of 27.5mR. Packaged in a compact TSOP surface-mount case with dimensions of 3.05mm length, 1.65mm width, and 1mm height. Operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.97W. Includes fast switching characteristics with turn-on delay time of 22ns and fall time of 84ns.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3493BDV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
7A
Drain to Source Resistance
27.5mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
27.5mR
Fall Time
84ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
1.805nF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.97W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
27.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
75ns
Turn-On Delay Time
22ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3493BDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3493BDV-T1-GE3 to view detailed technical specifications.
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