P-channel, general-purpose small-signal MOSFET in a TSOP package. Features a continuous drain current of 5.3A and a drain-source breakdown voltage of -20V. Offers a low drain-source on-resistance of 27mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.9W. This surface-mount component is lead-free and RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.9W
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Technical Specifications
Vishay SI3493DV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
5.3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
27mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
27mR
Fall Time
40ns
Gate to Source Voltage (Vgs)
8V
Height
0.039inch
Lead Free
Lead Free
Length
0.122inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
1.9W
Radiation Hardening
No
Rds On Max
27mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
125ns
Turn-On Delay Time
20ns
Width
0.067inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI3493DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3493DV-T1-E3 to view detailed technical specifications.
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