P-channel, general-purpose small-signal MOSFET in a TSOP package. Features a continuous drain current of 5.3A and a drain-source breakdown voltage of -20V. Offers a low drain-source on-resistance of 27mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.9W. This surface-mount component is lead-free and RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.9W
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Technical Specifications
Vishay SI3493DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 27mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.039inch |
| Lead Free | Lead Free |
| Length | 0.122inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 20ns |
| Width | 0.067inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3493DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3493DV-T1-E3 to view detailed technical specifications.
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