Vishay
SI3552DV-T1
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
PackageTSOP
PolarityN-CHANNEL, P-CHANNEL
Power1.15W
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Technical Specifications
Vishay SI3552DV-T1 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
30V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.15W
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
1.15W
RoHS Compliant
No
Series
SI3
Turn-Off Delay Time
12ns
Turn-On Delay Time
8ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI3552DV-T1 Datasheet
Download the complete datasheet for Vishay SI3552DV-T1 to view detailed technical specifications.
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