Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
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Vishay SI3552DV-T1 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.15W |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 1.15W |
| RoHS Compliant | No |
| Series | SI3 |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
| RoHS | Not Compliant |
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