N and P-Channel MOSFET, 20V Drain-Source Voltage, 2.1A Continuous Drain Current, 58mR Max Drain-Source On Resistance. Features 1.5V Threshold Voltage, 3ns Turn-On Delay, 7ns Fall Time, and 13ns Turn-Off Delay. Surface mount TSOP package with 150°C max operating temperature. RoHS compliant with 1.1W power dissipation.
Sign in to ask questions about the Vishay Si3585CDV-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay Si3585CDV-T1-GE3 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Resistance | 195mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 195mR |
| Fall Time | 7ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.1mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 58mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.000705oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay Si3585CDV-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
