Si3585CDV-T1-GE3

N/P-Channel MOSFET, 20V, 2.1A, 195mR, TSOP

N and P-Channel MOSFET, 20V Drain-Source Voltage, 2.1A Continuous Drain Current, 58mR Max Drain-Source On Resistance. Features 1.5V Threshold Voltage, 3ns Turn-On Delay, 7ns Fall Time, and 13ns Turn-Off Delay. Surface mount TSOP package with 150°C max operating temperature. RoHS compliant with 1.1W power dissipation.

PackageTSOP

MountingSurface Mount

PolarityN-CHANNEL, P-CHANNEL

Power1.1W

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Technical Specifications

Vishay Si3585CDV-T1-GE3 technical specifications.

General

Package/Case	TSOP
Continuous Drain Current (ID)	2.1A
Drain to Source Resistance	195mR
Drain to Source Voltage (Vdss)	20V
Drain-source On Resistance-Max	195mR
Fall Time	7ns
FET Type	N and P-Channel
Gate to Source Voltage (Vgs)	12V
Height	1.1mm
Input Capacitance	150pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.3W
Mount	Surface Mount
Number of Channels	2
Number of Elements	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL, P-CHANNEL
Power Dissipation	1.1W
Rds On Max	58mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	TrenchFET®
Threshold Voltage	1.5V
Turn-Off Delay Time	13ns
Turn-On Delay Time	3ns
Weight	0.000705oz