Dual-channel N-channel and P-channel small-signal MOSFET in a TSOP package. Features a 20V drain-source voltage, 2A continuous drain current, and a maximum power dissipation of 830mW. Offers a low drain-source on-resistance of 125mR and a threshold voltage of 600mV. Designed for surface mounting with a compact 3.1mm x 1.7mm x 1mm footprint. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI3585DV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
200MR
Fall Time
34ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Height
1mm
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Mount
Surface Mount
Nominal Vgs
600mV
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
125mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
19ns
Turn-On Delay Time
11ns
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3585DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3585DV-T1-E3 to view detailed technical specifications.
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