The SI3588DV-T1 is a dual N-channel/P-channel FET from Vishay with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 2.5A and a drain to source breakdown voltage of 20V. The device has a drain to source resistance of 300mR and a maximum power dissipation of 830mW. It is packaged in a TSOP package and is available in tape and reel packaging with 3000 units per package.
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Vishay SI3588DV-T1 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 83mW |
| Series | SI3 |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay SI3588DV-T1 to view detailed technical specifications.
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