Dual-channel N-channel and P-channel MOSFET, surface mount, in TSOP package. Features 20V drain-source breakdown voltage, 2.5A continuous drain current, and 145mR drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 830mW. Includes 29ns fall time and 24ns turn-off delay time. RoHS compliant.
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Vishay SI3588DV-T1-E3 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 145mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 145mR |
| Fall Time | 29ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Nominal Vgs | 450mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 450mV |
| Turn-Off Delay Time | 24ns |
| RoHS | Compliant |
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