Dual-channel N-channel and P-channel MOSFET, surface mount, in TSOP package. Features 20V drain-source breakdown voltage, 2.5A continuous drain current, and 145mR drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 830mW. Includes 29ns fall time and 24ns turn-off delay time. RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI3588DV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
145mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
145mR
Fall Time
29ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
8V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Mount
Surface Mount
Nominal Vgs
450mV
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
80mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
450mV
Turn-Off Delay Time
24ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI3588DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3588DV-T1-E3 to view detailed technical specifications.
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