N-channel MOSFET, 20V drain-source breakdown voltage, 2.4A continuous drain current, and 125mΩ drain-source resistance at 4.5V gate-source voltage. Features include a 6ns fall time, 10ns turn-on delay, and 14ns turn-off delay. This surface-mount device operates from -55°C to 150°C with a maximum power dissipation of 830mW. Packaged in TSOP for tape and reel distribution.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power830mW
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Technical Specifications
Vishay SI3812DV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Nominal Vgs | 600mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | LITTLE FOOT® |
| Threshold Voltage | 600mV |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3812DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3812DV-T1-GE3 to view detailed technical specifications.
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