P-channel MOSFET load switch IC with level shifting capabilities, featuring a 2.3A continuous drain current and 2.9A rated output current. This surface mount device operates within a -55°C to 150°C temperature range and offers a low 60mΩ drain-to-source resistance. The IC is housed in a compact TSOP package, measuring 0.122 inches in length and 0.067 inches in width, with a height of 0.039 inches. It supports a drain-to-source breakdown voltage of 8V and is RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power830mW
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Technical Specifications
Vishay SI3865BDV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.3A
Drain to Source Breakdown Voltage
8V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
8V
Height
0.039inch
Lead Free
Lead Free
Length
0.122inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Mount
Surface Mount
Number of Elements
2
Number of Inputs
1
Number of Outputs
1
On-state Resistance-Max
175mR
Output Current
2.9A
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
830mW
Radiation Hardening
No
Rated Current-Max
2.9A
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Width
0.067inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI3865BDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3865BDV-T1-E3 to view detailed technical specifications.
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