P-channel MOSFET load switch IC with level shifting capabilities, featuring a 2.3A continuous drain current and 2.9A rated output current. This surface mount device operates within a -55°C to 150°C temperature range and offers a low 60mΩ drain-to-source resistance. The IC is housed in a compact TSOP package, measuring 0.122 inches in length and 0.067 inches in width, with a height of 0.039 inches. It supports a drain-to-source breakdown voltage of 8V and is RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power830mW
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Technical Specifications
Vishay SI3865BDV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 8V |
| Height | 0.039inch |
| Lead Free | Lead Free |
| Length | 0.122inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Number of Inputs | 1 |
| Number of Outputs | 1 |
| On-state Resistance-Max | 175mR |
| Output Current | 2.9A |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Rated Current-Max | 2.9A |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Width | 0.067inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3865BDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3865BDV-T1-E3 to view detailed technical specifications.
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