P-channel MOSFET with 20V drain-source breakdown voltage and 3.9A continuous drain current. Features low 51mΩ drain-to-source resistance at 4.5V gate-source voltage. Surface mountable in a TSOP package, this component offers a maximum power dissipation of 1.1W and operates across a wide temperature range of -55°C to 150°C. RoHS compliant with fast switching times, including a 17ns turn-on delay.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
Quick Jump:
Technical Specifications
Vishay SI3867DV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
3.9A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
51mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
30ns
Gate to Source Voltage (Vgs)
12V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Nominal Vgs
-1.4V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
51mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.4V
Turn-Off Delay Time
32ns
Turn-On Delay Time
17ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI3867DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3867DV-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
