P-channel MOSFET with 20V drain-source breakdown voltage and 3.9A continuous drain current. Features low 51mΩ drain-to-source resistance at 4.5V gate-source voltage. Surface mountable in a TSOP package, this component offers a maximum power dissipation of 1.1W and operates across a wide temperature range of -55°C to 150°C. RoHS compliant with fast switching times, including a 17ns turn-on delay.
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Vishay SI3867DV-T1-GE3 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 51mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Nominal Vgs | -1.4V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 51mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.4V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 17ns |
| RoHS | Compliant |
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