SI3911DV-T1-GE3

Name: SI3911DV-T1-GE3 Vishay
Brand: Vishay
SKU: SI3911DV-T1-GE3

MOSFET 20V 2.2A 1.15W 145mohm @ 4.5V

PackageTSOP

MountingSurface Mount

PolarityP-CHANNEL

Power830mW

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Vishay SI3911DV-T1-GE3 technical specifications.

Package/Case	TSOP
Continuous Drain Current (ID)	1.8A
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	145mR
Drain to Source Voltage (Vdss)	20V
Fall Time	30ns
Gate to Source Voltage (Vgs)	8V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	830mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	830mW
Radiation Hardening	No
Rds On Max	145mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	24ns
Turn-On Delay Time	12ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.