P-channel MOSFET featuring 20V drain-source breakdown voltage and 2.7A continuous drain current. Surface mountable in a 6-TSOP package, this component offers a maximum on-resistance of 115mΩ. Operating across a temperature range of -55°C to 150°C, it boasts a 1.14W power dissipation and 30ns fall time.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.14W
Quick Jump:
Technical Specifications
Vishay SI3951DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 115mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.14W |
| Mount | Surface Mount |
| Nominal Vgs | -1.5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.14W |
| Rds On Max | 115mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 32ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3951DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3951DV-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.