P-channel, dual-channel JFET for general-purpose small signal applications. Features a continuous drain current of -2.9A and a drain-to-source voltage of -30V. Offers a low Rds On of 111mR and a threshold voltage of -1.2V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.4W. Packaged in a TSOP surface-mount configuration, this component is RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3993CDV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
-2.9A
Drain to Source Resistance
133mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
210pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Nominal Vgs
-1.2V
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
111mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.2V
Turn-Off Delay Time
17ns
Turn-On Delay Time
10ns
Weight
0.000705oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI3993CDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3993CDV-T1-GE3 to view detailed technical specifications.
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