
P-channel, dual-channel JFET for general-purpose small signal applications. Features a continuous drain current of -2.9A and a drain-to-source voltage of -30V. Offers a low Rds On of 111mR and a threshold voltage of -1.2V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.4W. Packaged in a TSOP surface-mount configuration, this component is RoHS compliant.
Vishay SI3993CDV-T1-GE3 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | -2.9A |
| Drain to Source Resistance | 133mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 210pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Nominal Vgs | -1.2V |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 111mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.2V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000705oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI3993CDV-T1-GE3 to view detailed technical specifications.
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