P-channel, 2-channel JFET transistor for general-purpose small signal applications. Features a 30V drain-source voltage rating and 1.8A continuous drain current. Offers a low 133mΩ maximum drain-source on-resistance. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 830mW. Packaged in a compact TSOP surface-mount case, this RoHS compliant component is supplied on tape and reel.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI3993DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Resistance | 133mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 133mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 133mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3993DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3993DV-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.