P-channel, 2-channel JFET transistor for general-purpose small signal applications. Features a 30V drain-source voltage rating and 1.8A continuous drain current. Offers a low 133mΩ maximum drain-source on-resistance. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 830mW. Packaged in a compact TSOP surface-mount case, this RoHS compliant component is supplied on tape and reel.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3993DV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
1.8A
Drain to Source Resistance
133mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
133mR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
133mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
17ns
Turn-On Delay Time
10ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3993DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3993DV-T1-E3 to view detailed technical specifications.
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