P-channel MOSFET featuring a 30V drain-source voltage and 1.8A continuous drain current. This surface-mount component offers a low 133mΩ drain-to-source resistance and operates within a -55°C to 150°C temperature range. Designed with two channels and two elements, it boasts fast switching speeds with turn-on delay of 10ns and fall time of 12ns. The device is packaged in a 6-TSOP for tape and reel distribution.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power830mW
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Technical Specifications
Vishay SI3993DV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Resistance | 133mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Rds On Max | 133mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000705oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3993DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3993DV-T1-GE3 to view detailed technical specifications.
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