N-channel MOSFET transistor, 100V drain-source voltage, 4.4A continuous drain current, and 63mΩ drain-source resistance. Features include 600pF input capacitance, 10ns turn-on delay, and 15ns fall time. Packaged in an 8-pin SOIC surface mount configuration, this component operates from -55°C to 150°C with a maximum power dissipation of 6W. RoHS compliant and lead-free.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4100DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Resistance | 63mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 600pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 63mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4100DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4100DY-T1-E3 to view detailed technical specifications.
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