N-channel MOSFET, surface mount, 100V Drain-to-Source Voltage (Vdss), 2.7A Continuous Drain Current (ID), and 158mΩ Drain to Source Resistance (Rds On Max). Features include a 2V Threshold Voltage, 370pF Input Capacitance, and 10ns Turn-On Delay Time. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 4.8W. Packaged in a 5mm x 4mm SOIC case, this RoHS compliant component is supplied on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4102DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
2.7A
Drain to Source Resistance
158mR
Drain to Source Voltage (Vdss)
100V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
370pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.8W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
158mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
12ns
Turn-On Delay Time
10ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4102DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4102DY-T1-GE3 to view detailed technical specifications.
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