N-channel MOSFET, 25V Vdss, 12.7A continuous drain current, and 8.6mR drain-source on-resistance. Features a 1.4V nominal Vgs, 600mV threshold voltage, and 1.925nF input capacitance. Operates within a -55°C to 150°C temperature range with 5W max power dissipation. Packaged in an 8-pin SOIC surface mount configuration, tape and reel, with lead-free and RoHS compliance.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4116DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
12.7A
Drain to Source Resistance
8.6mR
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
8.6mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
Input Capacitance
1.925nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Nominal Vgs
1.4V
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
8.6mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
50ns
Turn-On Delay Time
13ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4116DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4116DY-T1-GE3 to view detailed technical specifications.
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