N-channel MOSFET with 40V drain-source voltage and 13.6A continuous drain current. Features low 7.5mΩ drain-to-source resistance and 5.7W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-SOIC surface-mount case, this component is RoHS compliant and supplied on tape and reel.
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Vishay SI4124DY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 13.6A |
| Drain to Source Resistance | 7.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 3.54nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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