N-channel MOSFET, surface mount, 40V drain-to-source voltage, 13.6A continuous drain current, and 7.5mΩ drain-to-source resistance. Features include 11ns fall time, 30ns turn-on delay, and 38ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 5.7W. Packaged in an 8-SOIC case, this RoHS compliant component offers 3.54nF input capacitance.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4124DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
13.6A
Drain to Source Resistance
7.5mR
Drain to Source Voltage (Vdss)
40V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
3.54nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5.7W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
7.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
38ns
Turn-On Delay Time
30ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4124DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4124DY-T1-GE3 to view detailed technical specifications.
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