SI4126DY-T1-GE3

N-CH MOSFET 30V 39A 2.75mR SO Surface Mount

N-CHANNEL MOSFET, 30V Vdss, 39A continuous drain current, and 2.75mΩ max drain-source on-resistance at 10V Vgs. Features 7.8W max power dissipation, 150°C max operating temperature, and SO package for surface mounting. Offers 4.405nF input capacitance and fast switching times with 36ns turn-on and 53ns turn-off delays. RoHS compliant and lead-free.

PackageSO

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Vishay SI4126DY-T1-GE3 technical specifications.

General

Package/Case	SO
Continuous Drain Current (ID)	39A
Drain to Source Resistance	2.7mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	2.75mR
Fall Time	24ns
Gate to Source Voltage (Vgs)	20V
Height	1.55mm
Input Capacitance	4.405nF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	7.8W
Mount	Surface Mount
Number of Channels	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Radiation Hardening	No
Rds On Max	2.75mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	53ns
Turn-On Delay Time	36ns
Weight	0.006596oz
Width	4mm