N-CHANNEL MOSFET, 30V Vdss, 39A continuous drain current, and 2.75mΩ max drain-source on-resistance at 10V Vgs. Features 7.8W max power dissipation, 150°C max operating temperature, and SO package for surface mounting. Offers 4.405nF input capacitance and fast switching times with 36ns turn-on and 53ns turn-off delays. RoHS compliant and lead-free.
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Vishay SI4126DY-T1-GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 39A |
| Drain to Source Resistance | 2.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.75mR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 4.405nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.75mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 36ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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