N-Channel Silicon FET, Surface Mount, SOIC package. Features 30V Drain-to-Source Voltage (Vdss), 14A Continuous Drain Current (ID), and 14mΩ Drain-to-Source On-Resistance (Rds On Max). Operates from -55°C to 150°C with a 1.8V Threshold Voltage. Includes 15ns Turn-On Delay Time and 10ns Fall Time. RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4134DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
14A
Drain to Source Resistance
14mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
14MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
846pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
14mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
14ns
Turn-On Delay Time
15ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4134DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4134DY-T1-GE3 to view detailed technical specifications.
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